Datasheet > 2SD0946A|2SD946A

2SD0946A|2SD946A

更新时间： 2024-11-17 23:20:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	82K
描述
Power Device - Power Transistors - Others

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中文翻译

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2SD0946A|2SD946A 数据手册

Power Transistors

2SD0946 (2SD946), 2SD0946A (2SD946A),

2SD0946B (2SD946B)

Silicon NPN epitaxial planar type darlington

For low-frequency amplification

Unit: mm

+0.5

8.0

–0.1

3.2 0.2

φ 3.16 ^0.1

■ Features

• Forward current transfer ratio h_FEis designed high, which is appro-

priate to the driver circuit of motors and printer hammer.

• A shunt resistor is omitted from the driver.

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

2SD0946

2SD0946A

2SD0946B

2SD0946

2SD0946A

2SD0946B

V_CBO

Collector-base voltage

(Emitter open)

0.75 0.1

4.6 0.2

100

0.5 0.1

2.3 0.2

0.5 0.1

1.76 0.1

V_CEO

Collector-emitter voltage

(Base open)

1: Emitter

2: Collector

3: Base

TO-126B-A1 Package

Emitter-base voltage (Collector open) V_EBO

Internal Connection

Collector current

I_C

I_CP

P_C

T_j

1.5

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

1.2

°C

150

T_stg

−55 to +150

≈ 200 Ω

Typ

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Collector-base voltage

(Emitter open)

Symbol

Conditions

Min

100

Max

Unit

2SD0946

2SD0946A

2SD0946B

2SD0946

2SD0946A

2SD0946B

V_CBO

I_C= 100 µA, I_E= 0

V_CEO

I_C= 1 mA, I_B= 0

Collector-emitter voltage

(Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

V_EBO

I_CBO

I_EBO

h_FE

I_E= 100 µA, I_C= 0

V_CB= 25 V, I_E= 0

V_EB= 4 V, I_C= 0

V_CE= 10 V, I_C= 1 A

µA



0.1

1, 2

Forward current transfer ratio ^*

4000

40 000

1.8

Collector-emitter saturation voltage ^*

V_CE(sat)I_C= 1 A, I_B= 1 mA

V_BE(sat)I_C= 1 A, I_B= 1 mA

Base-emitter saturation voltage ^*

2.2

Transition frequency

f_T

V_CB= 10 V, I_E= −50 mA, f = 200 MHz

150

MHz

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. 1: Pulse measurement

2: Rank classification

Rank

h_FE

4000 to 10000 8000 to 20000 16000 to 40000

Note) The part numbers in the parenthesis show conventional part number.

Publication date: February 2004

SJD00164CED

12 3

中文翻译

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与2SD0946A|2SD946A相关器件

型号	品牌	获取价格	描述	数据表
2SD0946AQ	PANASONIC	获取价格	Power Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
2SD0946AR	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 50V V(BR)CEO \| 1A I(C) \| TO-126
2SD0946AS	PANASONIC	获取价格	Power Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
2SD0946B	PANASONIC	获取价格	For Low-Frequency Amplification
2SD0946B(2SD946B)	ETC	获取价格	パワーデバイス－パワートランジスタ－その他
2SD0946B\|2SD946B	ETC	获取价格	Power Device - Power Transistors - Others
2SD0946BQ	PANASONIC	获取价格	Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
2SD0946BR	PANASONIC	获取价格	Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
2SD0946BS	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 80V V(BR)CEO \| 1A I(C) \| TO-126
2SD0946Q	PANASONIC	获取价格	Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/

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